ZXMN2A14F
PACKAGE OUTLINE
PAD LAYOUT
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE DIMENSIONS
MILLIMETRES
INCHES
MILLIMETRES
INCHES
DIM
A
B
C
D
MIN
2.67
1.20
0.37
MAX
3.05
1.40
1.10
0.53
MIN
0.105
0.047
0.015
MAX
0.120
0.055
0.043
0.021
DIM
H
K
L
M
MIN
0.33
0.01
2.10
0.45
MAX
0.51
0.10
2.50
0.64
MIN
0.013
0.0004
0.083
0.018
MAX
0.020
0.004
0.0985
0.025
F
0.085
0.15
0.0034
0.0059
N
0.95 NOM
0.0375 NOM
G
1.90 NOM
0.075 NOM
10 TYP
10 TYP
? Zetex Semiconductors plc 2007
Europe
Zetex GmbH
Kustermannpark
Balanstra?e 59
D-81541 München
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
ISSUE 3 - SEPTEMBER 2007
SEMICONDUCTORS
8
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相关代理商/技术参数
ZXMN2A14FTC 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2AM832 制造商:未知厂家 制造商全称:未知厂家 功能描述:
ZXMN2AM832(1) 制造商:未知厂家 制造商全称:未知厂家 功能描述:
ZXMN2AM832TA 功能描述:MOSFET Dl 20V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN2AM832TC 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2AMCTA 功能描述:MOSFET 20V DUAL N-CH ENH 12V VGS 3.7 IDS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN2B01F 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23 制造商:DIODES 功能描述:MOSFET, N, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:2. 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 20V, 2.4A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:2.4A, Drain Source Voltage Vds:20V, On Resistance Rds(on):100mohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1V, No. of Pins:3 , RoHS Compliant: Yes 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:2.
ZXMN2B01FTA 功能描述:MOSFET 20V N-Channel MOSFET w/low gate drive cap RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube